New semiconductor breakthrough could power future displays and devices

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A team of Korean researchers has developed new p-type semiconductor materials and thin-film transistors that could lead to major innovations in next-generation displays and low-power devices.

These discoveries are expected to boost the performance of displays like high-resolution TVs and energy-efficient electronic devices.

The Electronics and Telecommunications Research Institute (ETRI) created a special transistor made from a mix of selenium (Se) and tellurium (Te).

This transistor is important because it can be made at room temperature, making the manufacturing process simpler and less costly.

Additionally, the researchers developed a way to adjust how n-type transistors work by controlling the flow of electrical charges through thin layers of Te.

This discovery will help improve the overall performance and stability of semiconductor devices.

Semiconductors are materials used in electronic devices that control the flow of electricity. They are divided into two main types: n-type, which adds impurities to increase the number of electrons, and p-type, which creates spaces (or “holes”) where electrons can move.

Until now, n-type semiconductors have been widely used in displays, while p-type semiconductors have had more limitations, such as higher costs and smaller sizes.

However, with the growing demand for faster and clearer displays, especially in high-resolution displays like 8K TVs, there is an increasing need for better p-type semiconductors. The new Se-Te alloy developed by ETRI provides improved performance, such as higher mobility and better control of the current flow compared to older materials.

This makes it an exciting candidate for use in future displays that require faster refresh rates and lower power consumption.

Another important part of this research is that it could change how semiconductor chips are made. Currently, the semiconductor industry is facing challenges in increasing the number of components that can fit on a single chip. One solution is to stack multiple layers of semiconductors, a method known as TSV (Through Silicon Vias), but this process is expensive and has several drawbacks.

ETRI’s new p-type semiconductor technology could solve some of these problems by making it possible to stack materials onto a single wafer at lower temperatures. This could eventually lead to more efficient and affordable manufacturing processes for advanced semiconductor devices.

Researchers at ETRI are now working to scale up this new technology and explore its use in larger devices, hoping it will lead to more breakthroughs in other areas like memory chips and flexible electronics.

Source: KSR.