Imagine a future where computers are even faster, smarter, and more efficient.
That future is getting closer, thanks to a group of researchers from Tohoku University, who have discovered a way to improve the technology that lets your devices remember information – your computer’s memory!
At the heart of their discovery is a special type of memory called “phase change memory”.
This technology depends on materials that can switch between two states, sort of like an on/off switch, but on a tiny, molecular level.
In one state, the material’s atoms are all jumbled up (amorphous), and in the other, they’re lined up neatly (crystalline). This on/off ability can be used to store and retrieve data.
This might sound like a game-changer, and it could be! Phase change memory has the potential to store more data and retrieve it faster than current memory tech.
But there are a few hurdles to clear before it can become widespread. For one, making these materials can be tricky, and the process of switching states is complex.
Recently, researchers have been looking at certain two-dimensional (2D) materials called Van Der Waals (vdW) transition metal di-chalcogenides as good candidates for phase change memory.
Now, the Tohoku University team has found a way to make a new material called niobium telluride (NbTe4) that looks especially promising.
Using a technique called “sputtering”, they were able to create thin films of NbTe4. Sputtering is like spray painting but on a microscopic scale; it allows precise control over the thickness and composition of the material.
The thin films they made were initially in the amorphous state but could be neatly arranged into the crystalline state by heating them to above 272ºC.
What makes NbTe4 stand out? For starters, it melts at a relatively low temperature and has a high crystallization temperature. This combination means less energy is needed to reset the memory and it’s more stable when in the amorphous phase.
When they tested NbTe4’s performance, the researchers found that it used less energy than current memory materials.
It could also store data for a long time at higher temperatures, up to 135ºC. This makes it suitable for use in high-temperature environments, like cars. Plus, NbTe4 switches states super quickly, in just about 30 nanoseconds!
“NbTe4’s low melting point, high crystallization temperature, and excellent switching performances make it the ideal material for overcoming current phase change memory challenges,” says Yi Shuang, co-author of the paper.
So, while it may not be tomorrow, the computers of the future are looking to be faster, smarter, and more efficient, thanks to the science of phase change memory and this super material, NbTe4!
The study was published in the journal Advanced Materials.
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